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| AAT8543 20V P-Channel Power MOSFET General Description The AAT8543 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package. Features * * * Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -4.2A @ 25C Low On-Resistance: -- 57m @ VGS = -4.5V -- 104m @ VGS = -2.5V Applications * * * Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones SC70JW-8 Package Top View D 8 D 7 D 6 D 5 Absolute Maximum Ratings TA = 25C, unless otherwise noted. Symbol VDS VGS ID IDM IS TJ TSTG 1 S 2 S 3 S 4 G Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ = 150C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range TA = 25C TA = 70C Value -20 12 4.2 3.3 20 -1.2 -55 to 150 -55 to 150 Units V A C C Thermal Characteristics1 Symbol RJA RJA2 RJF PD Description Typical Junction-to-Ambient Steady State Maximum Junction-to-Ambient t<5 Seconds Typical Junction-to-Foot TA = 25C Maximum Power Dissipation TA = 70C Typ 100 62 35 Max 124 76 42 1.6 1.0 Units C/W C/W C/W W 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300s. 8543.2005.04.1.0 1 AAT8543 20V P-Channel Power MOSFET Electrical Characteristics TJ = 25C, unless otherwise noted. Symbol Description DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source On-Resistance1 Conditions VGS = 0V, ID = -250A Min -20 Typ Max Units V VGS = -4.5V, ID = -4.2A VGS = -2.5V, ID = -3.1A 1 ID(ON) On-State Drain Current VGS = -4.5V, VDS = -5V (pulsed) VGS(th) Gate Threshold Voltage VGS = VDS, ID = -250A IGSS Gate-Body Leakage Current VGS = 12V, VDS = 0V V = 0V, VDS = -20V IDSS Drain Source Leakage Current GS VGS = 0V, VDS = -16V, TJ = 70C2 1 gfs Forward Transconductance VDS = -5V, ID = -4.2A Dynamic Characteristics2 QG Total Gate Charge VDS = -10V, RD = 2.4, VGS = -4.5V QGS Gate-Source Charge VDS = -10V, RD = 2.4, VGS = -4.5V QGD Gate-Drain Charge VDS = -10V, RD = 2.4, VGS = -4.5V tD(ON) Turn-On Delay VDS = -10V, RD = 2.4, VGS = -4.5V, RG = 6 tR Turn-On Rise Time VDS = -10V, RD = 2.4, VGS = -4.5V, RG = 6 tD(OFF) Turn-Off Delay VDS = -10V, RD = 2.4, VGS = -4.5V, RG = 6 tF Turn-Off Fall Time VDS = -10V, RD = 2.4, VGS = -4.5V, RG = 6 Source-Drain Diode Characteristics VSD Source-Drain Forward VGS = 0, IS = -4.2A Voltage1 IS Continuous Diode Current3 45 80 -20 -0.6 57 104 m A V nA A S 100 -1 -5 7 8.5 1.5 2.8 10 32 61 38 -1.3 -1.2 nC ns V A 1. Pulse test: Pulse Width = 300s. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2 8543.2005.04.1.0 AAT8543 20V P-Channel Power MOSFET Typical Characteristics TJ = 25C, unless otherwise noted. Output Characteristics 20 Transfer Characteristics 20 15 5V 4.5V 4V 3.5V 3V VD = VG 15 -55C 25C 125C IDS (A) 10 ID (A) 2.5V 10 5 2V 1.5V 5 0 0 0.5 1 1.5 2 2.5 3 0 0 1 2 3 4 5 VDS (V) VGS (V) On-Resistance vs. Drain Current 0.4 0.32 On-Resistance vs. Gate-to-Source Voltage 0.25 0.2 ID = 4.2A RDS(ON) () RDS(ON) () 20 0.24 0.16 0.08 0 0.15 0.1 0.05 VGS = 2.5V VGS = 4.5V 0 5 10 15 0 0 1 2 3 4 5 ID (A) VGS (V) On-Resistance vs. Junction Temperature 1.6 1.5 Threshold Voltage 0.5 0.4 Normalized RDS(ON) VGS(th) Variance (V) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VGS = 4.5V ID = 4.2A ID = 250A 0.3 0.2 0.1 0 -0.1 -0.2 -25 0 25 50 75 100 125 150 -0.3 -50 -25 0 25 50 75 100 125 150 TJ (C) T J (C) 8543.2005.04.1.0 3 AAT8543 20V P-Channel Power MOSFET Typical Characteristics TJ = 25C, unless otherwise noted. Gate Charge 5 4 3 2 1 0.1 0 0 2 4 6 8 10 0 0 .2 0.4 0 .6 0.8 1 1.2 100 Source-Drain Diode Forward Voltage VD = 10V ID = 4.2A 10 VGS (V) IS (A) 1 TJ = 150C TJ = 25C VSD (V) QG, Charge (nC) Capacitance 1000 800 600 400 200 0 0 5 10 15 20 Single Pulse Power, Junction to Ambient 50 45 40 Capacitance (pF) Ciss 35 Power (W) 30 25 20 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 Coss Crss VDS (V) Time (s) Transient Thermal Response, Junction to Ambient 10 Normalized Effective Transient Thermal Impedance 1 .5 0.1 .2 .1 .05 .02 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Time (s) 4 8543.2005.04.1.0 AAT8543 20V P-Channel Power MOSFET Ordering Information Package SC70JW-8 Marking1 JTXYY Part Number (Tape and Reel)2 AAT8543IJS-T1 Package Information SC70JW-8 0.50 BSC 0.50 BSC 0.50 BSC 1.75 0.10 0.225 0.075 2.00 0.20 2.20 0.20 0.048REF 0.15 0.05 0.85 0.15 1.10 MAX 0.100 7 3 0.45 0.10 2.10 0.30 4 4 All dimensions in millimeters. 1. XYY = assembly and date code. 2. Sample stock is generally held on part numbers listed in BOLD. 8543.2005.04.1.0 0.05 0.05 5 AAT8543 20V P-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 8543.2005.04.1.0 |
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